Direct Solution Deposition of Large‐Area Non‐Solvated Fullerene Single‐Crystal Films for High‐Performance n‐Type Field‐Effect Transistors

Abstract

AbstractFullerene (C60) crystals have attracted considerable attention in the field of optoelectronic devices owing to their excellent performance as n‐type semiconductor material. However, a challenge still remains unbeaten as to the continuous crystallization of non‐solvated C60 single‐crystal films with high coverage and uniform alignment using low‐cost solution techniques. Here, a facile bar coating method is used to prepare ribbon‐shaped non‐solvated C60 crystals with a large area (up to centimeters) and high coverage (>95%) by precisely controlling the crystallization process from specific solvents. Benefiting from the non‐solvated crystalline structure, well‐distributed thickness, uniform morphological alignment, and crystallographic orientation, organic field‐effect transistors fabricated from the C60 single‐crystal films exhibit a high average electron mobility of 2.28 cm2 V−1s−1, along with the coefficient of variance (CV) as small as 13.6%. This efficient manufacturing method will lay a strong foundation for C60 single‐crystal films to fit into the future high‐performance integrated optoelectronic application.