Affiliation:
1. State Key Laboratory of Silicon and Advanced Semiconductor Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 P. R. China
Abstract
AbstractPerovskite light‐emitting diodes (PeLEDs) have shown incalculable application potential in the fields of next‐generation displays and light communication owing to the rapidly increased external quantum efficiencies (EQEs). However, most PeLEDs obtain a maximum EQE at small current density (J) region and suffer from severe efficiency roll‐off in different extents. Herein, it is demonstrated that the dopant with large dipole moment like KBF4 facilitates the effective dielectric regulation of perovskite emissive layer. The increased dielectric constant lowers the exciton binding energy and suppresses the Auger recombination of the 2D/3D segregated perovskite structure, which improves the photoluminescence quantum yield remarkably at an excitation intensity up to 103 mW cm−2. Accordingly, the top‐emission PeLED that delivers a high maximum EQE above 20% is fabricated and can retain EQE > 10% at an extremely high J of 708 mA cm−2. These results represent one of the most efficient top‐emission PeLEDs with ultra‐low efficiency roll‐off, which provide a viable methodology for tuning the dielectric response of perovskite films for improved high radiance performance of perovskite electroluminescence devices.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Fundamental Research Funds for the Central Universities
Subject
Biomaterials,Biotechnology,General Materials Science,General Chemistry