Affiliation:
1. MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, School of Materials Science and Engineering Nanjing University of Science and Technology Nanjing 210094 P. R. China
2. Key Laboratory of Materials Physics, Institute of Solid State Physics Chinese Academy of Sciences Hefei 230031 P. R. China
3. School of Materials Science and Engineering Yancheng Institute of Technology Jiangsu 221051 P. R. China
4. Advanced Research Institute of Multidisciplinary Sciences Qufu Normal University Qufu Shandong Province 273165 P. R. China
Abstract
AbstractSnTe, emerging as an environment‐friendly alternative to conventional PbTe thermoelectrics, has drawn significant attention for clean energy conversion. Here, a high peak figure of merit (ZT) of 1.45 at 873 K in Ge/Bi codoped SnTe–AgBiTe2 alloys is reported. It is demonstrated that the existence of Ge, Bi, and Ag facilitate band convergence in SnTe, resulting in remarkable enhancement of Seebeck coefficient and power factor. Simultaneously, localized lattice imperfections including dislocations, point defects, and micro/nanopore structures are caused by incorporation of Ge, Bi, and Ag, which can effectively scatter heat carrying phonons with different wavelengths and contribute to an extremely low κL of 0.61 W m−1 K−1 in Sn0.92Ge0.04Bi0.04Te–10%AgBiTe2. Such high peak ZT is achieved by decouples electron and phonon transport through band modification and localized lattice engineering, highlighting promising solutions for advancing thermoelectrics.
Funder
National Natural Science Foundation of China
Fundamental Research Funds for the Central Universities
Subject
Biomaterials,Biotechnology,General Materials Science,General Chemistry
Cited by
3 articles.
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