Affiliation:
1. Department of Chemical Engineering Indian Institute of Technology Madras Adyar Chennai Tamil Nadu 600036 India
2. Sophisticated Analytical Instrument Facility Indian Institute of Technology Madras Adyar Chennai Tamil Nadu 600036 India
Abstract
AbstractHalide ferroelectric materials have garnered a lot of interest because of their distinctive electrical and structural characteristics. In this study, the design and development of a new non‐centrosymmetric 2D layered halide double perovskite material, Cl1.14Br2.86PA4AgInBr8 (CPAIn) is reported. This material shows ferroelectric properties above room temperature, with a Curie temperature of 190 °C. This behavior is achieved through the substitution of the halogenated A‐site organic linker, 3‐chloropropylammonium. CPAIn exhibits anisotropic ferroelectric behavior with higher spontaneous polarization of 6.25 µC cm−2 along the perpendicular direction to the octahedral layers, whereas the value decreases to 0.174 µC cm−2 between sheets. While using bottom contact to study the nature of polarity within a sheet, the P‐E loop displays capacitive loop. The nature and value of polarization is highly direction dependent, and to further understand the mechanism of conduction, a combination of temperature‐dependent impedance studies and poling dependent conductivity techniques are employed. These directional dependent properties hold immense potential in memory devices, sensors and photovoltaics, piezoelectric devices and energy storage.