Affiliation:
1. State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano‐optoelectronics School of Physics Peking University Beijing 100871 China
2. Academy for Advanced Interdisciplinary Studies Peking University Beijing 100871 China
3. Yangtze Delta Institute of Optoelectronics Peking University Nantong 226010 China
4. Collaborative Innovation Center of Quantum Matter Beijing 100871 China
Abstract
AbstractWith the rapid development of integrated circuits, there is an increasing need to boost transistor density. In addition to shrinking the device size to the atomic scale, vertically stacked interlayer interconnection technology is also an effective solution. However, realizing large‐scale vertically interconnected complementary field‐effect transistors (CFETs) has never been easy. Currently‐used semiconductor channel synthesis and doping technologies often suffer from complex fabrication processes, poor vertical integration, low device yield, and inability to large‐scale production. Here, a method to prepare large‐scale vertically interconnected CFETs based on a thermal evaporation process is reported. Thermally‐evaporated etching‐free Te and Bi2S3 serve as p‐type and n‐type semiconductor channels and exhibit FET on‐off ratios of 103 and 105, respectively. The vertically interconnected CFET inverter exhibits a clear switching behavior with a voltage gain of 17 at a 4 V supply voltage and a device yield of 100%. Based on the ability of thermal evaporation to prepare large‐scale uniform semiconductor channels on arbitrary surfaces, repeated upward manufacturing can realize multi‐level interlayer interconnection integrated circuits.
Funder
Innovative Research Group Project of the National Natural Science Foundation of China
Key Project of Frontier Science Research of Chinese Academy of Sciences
Natural Science Foundation of Beijing Municipality
China Postdoctoral Science Foundation
Subject
Biomaterials,Biotechnology,General Materials Science,General Chemistry