Scaling and Confinement in Ultrathin Chalcogenide Films as Exemplified by GeTe-Reference-Cited by-同舟云学术

Scaling and Confinement in Ultrathin Chalcogenide Films as Exemplified by GeTe

Published:2022-05 Issue:21 Volume:18 Page:2201753
ISSN:1613-6810
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language:en
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Author:

Kerres Peter¹,Zhou Yiming¹,Vaishnav Hetal¹²,Raghuwanshi Mohit¹²,Wang Jiangjing¹³,Häser Maria¹,Pohlmann Marc¹,Cheng Yudong¹³,Schön Carl‐Friedrich¹,Jansen Thomas⁴,Bellin Christophe⁵,Bürgler Daniel E.⁴,Jalil Abdur Rehman⁶,Ringkamp Christoph⁶,Kowalczyk Hugo⁵,Schneider Claus M.⁴⁷,Shukla Abhay⁵,Wuttig Matthias²⁷^ORCID

Affiliation:

1. I. Institute of Physics (IA) RWTH Aachen University 52056 Aachen Germany

2. Peter Grünberg Institute—JARA‐Institute Energy‐Efficient Information Technology (PGI‐10) Forschungszentrum Jülich GmbH 52428 Jülich Germany

3. Center for Alloy Innovation and Design Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an 710049 China

4. Peter Grünberg Institute—Electronic Properties (PGI‐6) Forschungszentrum Jülich GmbH 52428 Jülich Germany

5. Institut de Minéralogie de Physique des Matériaux et de Cosmochimie Sorbonne Université UMR CNRS 7590 MNHN Paris F‐75005 France

6. Peter Grünberg Institute—Semiconductor Nanoelectronics (PGI‐6) Forschungszentrum Jülich GmbH 52428 Jülich Germany

7. JARA‐FIT RWTH Aachen University 52056 Aachen Germany

Funder

Deutsche Forschungsgemeinschaft

RWTH Aachen University

Forschungszentrum Jülich

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.202201753

Reference52 articles.

1. Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

2. High thermoelectric figure of merit in heavy hole dominated PbTe

3. Realization of Both n- and p-Type GeTe Thermoelectrics: Electronic Structure Modulation by AgBiSe2 Alloying

4. Metavalent Bonding in GeSe Leads to High Thermoelectric Performance

5. Thickness-dependent bulk properties and weak antilocalization effect in topological insulator Bi2Se3

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