(Bi,Sb)2Se3 Alloy Thin Film for Short‐Wavelength Infrared Photodetector and TFT Monolithic‐Integrated Matrix Imaging

Author:

Gao Ruisi1,He Xin2,Chen Chao1,Bao Xiaoqing1,Yang Feifan1,Yang Xuke1,He Jungang3,Dong Chong1,Li Chuanhao4,Chen Shuo4,Liang Guangxing4,Jiang Shenglin1,Tang Jiang1,Zhang Guangzu1,Li Kanghua1ORCID

Affiliation:

1. School of Integrated Circuits Engineering Research Center for Functional Ceramics MOE Wuhan National Laboratory for Optoelectronics (WNLO) School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan Hubei 430074 P. R. China

2. Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education Jianghan University Wuhan 430056 P. R. China

3. Hubei Key Laboratory of Plasma Chemistry and Advanced Materials Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials School of Materials Science and Engineering Wuhan Institute of Technology Wuhan 430205 P. R. China

4. Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen Guangdong 518060 P. R. China

Abstract

AbstractShort‐wavelength infrared photodetectors play a significant role in various fields such as autonomous driving, military security, and biological medicine. However, state‐of‐the‐art short‐wavelength infrared photodetectors, such as InGaAs, require high‐temperature fabrication and heterogenous integration with complementary metal‐oxide‐semiconductor (CMOS) readout circuits (ROIC), resulting in a high cost and low imaging resolution. Herein, for the first time, a low‐cost, high‐performance, high‐stable, and thin‐film transistor (TFT) ROIC monolithic‐integrated (Bi,Sb)2Se3 alloy thin‐film short‐wavelength infrared photodetector is reported. The (Bi,Sb)2Se3 alloy thin‐film short‐wavelength infrared photodetectors demonstrate a high external quantum efficiency (EQE) of 21.1% (light intensity of 0.76 µW cm−2) and a fast response time (3.24 µs). The highest EQE is about two magnitudes than that of the extrinsic photoconduction of Sb2Se3 (0.051%). In addition, the unpackaged devices demonstrate high electric and thermal stability (almost no attenuation at 120 °C for 312 h), showing potential for in‐vehicle applications that may experient such a high temperature. Finally, both the (Bi,Sb)2Se3 alloy thin film and n‐type CdSe buffer layer are directly deposited on the TFT ROIC (with a 64 × 64‐pixel array) with a low‐temperature process and the material identification and imaging applications are presented. This work is a significant breakthrough in ROIC monolithic‐integrated short‐wavelength infrared imaging chips.

Funder

Natural Science Foundation of Hubei Province

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

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