Affiliation:
1. School of Integrated Circuits Engineering Research Center for Functional Ceramics MOE Wuhan National Laboratory for Optoelectronics (WNLO) School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan Hubei 430074 P. R. China
2. Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education Jianghan University Wuhan 430056 P. R. China
3. Hubei Key Laboratory of Plasma Chemistry and Advanced Materials Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials School of Materials Science and Engineering Wuhan Institute of Technology Wuhan 430205 P. R. China
4. Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen Guangdong 518060 P. R. China
Abstract
AbstractShort‐wavelength infrared photodetectors play a significant role in various fields such as autonomous driving, military security, and biological medicine. However, state‐of‐the‐art short‐wavelength infrared photodetectors, such as InGaAs, require high‐temperature fabrication and heterogenous integration with complementary metal‐oxide‐semiconductor (CMOS) readout circuits (ROIC), resulting in a high cost and low imaging resolution. Herein, for the first time, a low‐cost, high‐performance, high‐stable, and thin‐film transistor (TFT) ROIC monolithic‐integrated (Bi,Sb)2Se3 alloy thin‐film short‐wavelength infrared photodetector is reported. The (Bi,Sb)2Se3 alloy thin‐film short‐wavelength infrared photodetectors demonstrate a high external quantum efficiency (EQE) of 21.1% (light intensity of 0.76 µW cm−2) and a fast response time (3.24 µs). The highest EQE is about two magnitudes than that of the extrinsic photoconduction of Sb2Se3 (0.051%). In addition, the unpackaged devices demonstrate high electric and thermal stability (almost no attenuation at 120 °C for 312 h), showing potential for in‐vehicle applications that may experient such a high temperature. Finally, both the (Bi,Sb)2Se3 alloy thin film and n‐type CdSe buffer layer are directly deposited on the TFT ROIC (with a 64 × 64‐pixel array) with a low‐temperature process and the material identification and imaging applications are presented. This work is a significant breakthrough in ROIC monolithic‐integrated short‐wavelength infrared imaging chips.
Funder
Natural Science Foundation of Hubei Province
Fundamental Research Funds for the Central Universities
National Natural Science Foundation of China
National Key Research and Development Program of China
Subject
Biomaterials,Biotechnology,General Materials Science,General Chemistry