Highly Linear and Symmetric Synaptic Memtransistors Based on Polarization Switching in Two‐Dimensional Ferroelectric Semiconductors-Reference-Cited by-同舟云学术

Highly Linear and Symmetric Synaptic Memtransistors Based on Polarization Switching in Two‐Dimensional Ferroelectric Semiconductors

Published:2022-09-26 Issue:45 Volume:18 Page:2203611
ISSN:1613-6810
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language:en
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Author:

Chen Yitong¹²,Li Dingwei¹²,Ren Huihui¹²,Tang Yingjie¹²,Liang Kun¹²,Wang Yan¹²,Li Fanfan²,Song Chunyan²,Guan Jiaqi³,Chen Zhong⁴,Lu Xingyu⁴,Xu Guangwei⁵,Li Wenbin⁶,Liu Shi⁷,Zhu Bowen²⁶^ORCID

Affiliation:

1. School of Materials and Engineering Zhejiang University Hangzhou 310027 China

2. Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province School of Engineering Westlake University Hangzhou 310024 China

3. Instrumentation and Service Centre for Physical Sciences Westlake University Hangzhou 310024 China

4. Instrumentation and Service Centre for Molecular Sciences Westlake University Hangzhou 310024 China

5. School of Microelectronics University of Science and Technology of China Hefei 230026 China

6. Institute of Advanced Technology Westlake Institute for Advanced Study Hangzhou 310024 China

7. School of Science Westlake University Hangzhou Zhejiang 310024 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.202203611

Reference45 articles.

1. Emerging Memristive Artificial Synapses and Neurons for Energy‐Efficient Neuromorphic Computing

2. Neuromorphic nanoelectronic materials

3. Bridging Biological and Artificial Neural Networks with Emerging Neuromorphic Devices: Fundamentals, Progress, and Challenges

4. Physics for neuromorphic computing

5. Fully Printed Optoelectronic Synaptic Transistors Based on Quantum Dot–Metal Oxide Semiconductor Heterojunctions

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