Modeling Heat Transfer During Sublimation Growth of Silicon Carbide Single Crystals by Physical Vapor Transport
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Publisher
John Wiley & Sons, Inc.
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/9781118095256.ch9/fullpdf
Reference18 articles.
1. Radiation- and Convection-driven Transient Heat Transfer during Sublimation Growth of Silicon Carbide Single Crystals;Klein;J. Cryst. Growth,2001
2. Modeling of Heat Transfer and Kinetics of Physical Vapor Transport Growth of Silicon Carbide Crystals;Chen;ASME Journal of Heat Transfer,2001
3. Growth of Large SiC Single Crystals;Barrett;J. Cryst. Growth,1993
4. Growth Kinetics of Vapor-grown SiC;Kaneko;J. Cryst. Growth,1993
5. On the Sublimation Growth of SiC Bulk Crystals: Development of a Numerical Process Model;Hofmann;J. Cryst. Growth,1995
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