Affiliation:
1. School of Chemistry and Chemical Engineering Shandong University Jinan China
2. Shandong Provincial Key Laboratory for Science of Material Creation and Energy Conversion Science Center for Material Creation and Energy Conversion Institute of Frontier and Interdisciplinary Science Shandong University Qingdao China
3. State Key Laboratory of Biobased Material and Green Papermaking Qilu University of Technology (Shandong Academy of Sciences) Jinan China
Abstract
Abstract3D perovskite materials are advancing rapidly in the field of photovoltaics and light‐emitting diodes, but the development in field effect transistors (FETs) is limited due to their intrinsic ion migration. Ion migration in perovskite FETs can screen the electric field of the gate and affect its modulation, as well as influence the charge carriers transport, leading to non‐ideal device characteristics and lower device stability. Here, we provide a concise review that explains the mechanism of ion migration, summarizes the strategies for suppressing ion migration, and concludes with a discussion of the future prospects for 3D perovskite FETs.
Funder
Natural Science Foundation of Shandong Province