SIMS depth profiling with sample rotation in a cameca IMS 3F
Author:
Publisher
Wiley
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference11 articles.
1. Surface morphology of Si(100), GaAs(100) and InP(100) following O2+ and Cs+ ion bombardment
2. in Sputtering by Particle Bombardment II, ed. by pp. 231-269. Springer Verlag, Berlin (1983).
3. Improved sputter-depth profiles using two ion guns
4. and in Methods of Surface Analysis, ed. by Cambridge University Press, Cambridge (1989).
5. Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment
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