Reactive ion sputter depth profiling of tantalum oxides: A comparative study using ToF-SIMS and laser-SNMS-Reference-Cited by-同舟云学术

Reactive ion sputter depth profiling of tantalum oxides: A comparative study using ToF-SIMS and laser-SNMS

Published:1995-08 Issue:9 Volume:23 Page:641-651
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Franzreb K.,Mathieu H. J.,Landolt D.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference58 articles.

1. Sputtering of Ta2O5 by Ar+ ions at energies below 1 keV

2. PhD Thesis, Technical University of Clausthal, Germany (1981).

3. and Proceedings of 4th International Conference on Solid Surfaces and 3rd European Conference on Surface Science (ECOSS), Cannes, France, 1981, ed. by D. A. Degas, and M. Costa, Vol. II, pp. 1234 and 1291.

4. in The Physics of Ionized Gases (XII SPIC 1984), ed. by and pp. 571-598. Belgrade: World Scientific, Singapore, 1985.

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