Void formation at silicon nitride/silicon interfaces studied by variable-energy positrons-Reference-Cited by-同舟云学术

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Void formation at silicon nitride/silicon interfaces studied by variable-energy positrons

Published:1994-12 Issue:12 Volume:21 Page:839-845
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Halec Andrzej,Schultz Peter J.,Boudreau Marcel,Boumerzoug Mohamed,Mascher Peter,McCaffrey John P.,Jackman T. E.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference34 articles.

1. Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique

2. Silicon dioxide films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

3. Silicon nitride formation from a silane–nitrogen electron cyclotron resonance plasma

4. and (eds), Silicon Nitride and Silicon Dioxide Thin Insulating Films. 3 Electrochemical Society, Pennington (1987).

5. (ed.), Low Pressure Chemical Vapour Deposited Silicon Oxynitride Films, Material and Application. Springer, Heidelberg (1991).

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of the optical properties of SiOxNy thin films by effective medium theories;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-07

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