The Stacking Faulted Nature of the Narrow Gap Semiconductor Sc 2 Si 2 Te 6-Reference-Cited by-同舟云学术

The Stacking Faulted Nature of the Narrow Gap Semiconductor Sc ₂ Si ₂ Te ₆

Published:2022-11-15 Issue:21 Volume:648 Page:
ISSN:0044-2313
Container-title:Zeitschrift für anorganische und allgemeine Chemie
language:en
Short-container-title:Zeitschrift anorg allge chemie

Author:

Pielnhofer Florian¹²^ORCID,Bette Sebastian¹,Eger Roland¹,Duppel Viola¹,Nuss Jürgen¹,Dolle Christian³,Dinnebier Robert E.¹,Lotsch Bettina V.¹⁴

Affiliation:

1. Max Planck Institute for Solid State Research Heisenbergstr. 1 70569 Stuttgart Germany

2. New address: Institute of Inorganic Chemistry University of Regensburg 93053 Regensburg Germany

3. Laboratory for Electron Microscopy Microscopy of Nanoscale Structures and Mechanisms Karlsruhe Institute of Technology Engesserstr. 7 76131 Karlsruhe Germany

4. Department of Chemistry Ludwig-Maximilians-Universität München Butenandtstr. 5–13 81377 München Germany

Publisher

Wiley

Subject

Inorganic Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/zaac.202200234

Reference74 articles.

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2. van der Waals Metallic Transition Metal Dichalcogenides

3. Electronic properties of transition-metal dichalcogenides

4. Synthesis, Properties, and Applications of Transition Metal-Doped Layered Transition Metal Dichalcogenides

5. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

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