Electronic structure of the high‐spin Co4+ system Ba2CoO4

Author:

Takegami Daisuke1,Hu Zhiwei1,Falke Johannes1,Meléndez‐Sans Anna1,Liu Cheng‐En1,Chang Chun‐Fu1,Kuo Chang‐Yang23,Chen Chien‐Te3,Guo Hanjie14,Komarek Alexander1,Tanaka Arata5,Hébert Sylvie6,Tjeng Liu Hao1ORCID

Affiliation:

1. Max Planck Institute for Chemical Physics of Solids Nöthnitzer Straße 40 01187 Dresden Germany

2. Department of Electrophysics National Yang Ming Chiao Tung University (NYCU) 1001 University Road Hsinchu 30010 Taiwan

3. National Synchrotron Radiation Research Center 101 Hsin-Ann Road Hsinchu 30077 Taiwan

4. Present address: Songshan Lake Materials Laboratory Dongguan, Guangdong 523808 China

5. Department of Quantum Matter ADSM Hiroshima University Higashi Hiroshima 739-8526 Japan

6. Laboratoire CRISMAT Normandie Univ ENSICAEN UNICAEN CNRS 14050 Caen France

Abstract

AbstractThe electronic structure of the semiconductor Ba2CoO4 has been investigated using x‐ray absorption spectroscopy at the Co‐L2,3 and O‐K edges as well as soft x‐ray valence band photoemission. The spectra can be accurately reproduced by a combination of full atomic‐multiplet configuration‐interaction cluster calculations and ab‐initio band structure analysis. The large negative O 2p to Co 3d charge‐transfer energy has been established as well as the high stability of the S=5/2 high‐spin state of the Co4+ ion. The band gap of this high‐oxidation state material is sizeable and can be attributed to the joint effect of electron correlations, the local tetrahedral coordination of the Co ions, and the poor electronic connection between the CoO4 tetrahedra.

Publisher

Wiley

Subject

Inorganic Chemistry

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