Large‐signal behavioral model for radio frequency power transistors based on modified canonical sectionwise piecewise‐linear functions-Reference-Cited by-同舟云学术

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Large‐signal behavioral model for radio frequency power transistors based on modified canonical sectionwise piecewise‐linear functions

Published:2020-06-03 Issue:6 Volume:33 Page:
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numer Model El

Author:

Cai Jialin¹^ORCID,King Justin²,Liu Jun¹,Wang Jianhua¹,Sun Lingling¹

Affiliation:

1. The Key Laboratory of RF Circuit and System, Ministry of Education Hangzhou Dianzi University Hangzhou China

2. RF and Microwave Research Group Trinity College Dublin Dublin Ireland

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.2767

Reference21 articles.

1. Empowering GaN HEMT models: The gateway for power amplifier design

2. Nonlinear Electrothermal GaN HEMT Model Applied to High-Efficiency Power Amplifier Design

3. A Scalable Multiharmonic Surface-Potential Model of AlGaN/GaN HEMTs

4. A comparative overview of microwave and wireless power-amplifier behavioral modeling approaches

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