Analysis of the composition of tantalum nitride in CMOS metallization trenches using parallel angle‐resolved XPS-Reference-Cited by-同舟云学术

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Analysis of the composition of tantalum nitride in CMOS metallization trenches using parallel angle‐resolved XPS

Published:2020-10-04 Issue:12 Volume:52 Page:962-967
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf Interface Anal

Author:

Wehring Bettina¹^ORCID,Gerlich Lukas¹,Kia Alireza M.¹,Wislicenus Marcus¹,Uhlig Benjamin¹

Affiliation:

1. Center Nanoelectronic Technologies (CNT) Fraunhofer Institute for Photonic Microsystems (IPMS) Dresden Germany

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sia.6887

Reference10 articles.

1. Simulation of TaNx deposition by Reactive PVD

2. Evaluation of Ta and TaN-based Cu diffusion barriers deposited by Advanced Hi-Fill (AHF) sputtering onto blanket wafers and high aspect ratio structures

3. Diffusion barrier performance of novel Ti/TaN double layers for Cu metallization;Zhou YM;Appl Surf Sci,2014

4. The reliability improvement of cu interconnection by the control of crystallized α‐Ta/TaNx diffusion barrier;Wang WL;Journal of Nanomaterials,2015

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