Fabrication and analysis of multijunction solar cells with a quantum dot (In)GaAs junction-Reference-Cited by-同舟云学术

Fabrication and analysis of multijunction solar cells with a quantum dot (In)GaAs junction

Published:2013-04-27 Issue:11 Volume:22 Page:1172-1179
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Kerestes Christopher¹²,Polly Stephen¹,Forbes David¹,Bailey Christopher³,Podell Adam¹,Spann John²,Patel Pravin²,Richards Benjamin²,Sharps Paul²,Hubbard Seth¹

Affiliation:

1. NanoPower Research Labs; Rochester Institute of Technology; Rochester NY USA

2. Emcore Photovoltaics; Albuquerque NM USA

3. Naval Research Laboratories; Solid State Devices Branch; Washington DC USA

Funder

Emcore Corporation

US Government

Intelligence Community Postdoctoral Research Fellowship Program

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pip.2378/fullpdf

Reference22 articles.

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3. Deep level defects in proton radiated GaAs grown on metamorphic SiGe/Si substrates;Gonzalez;Journal of Applied Physics,2006

4. Strain-balanced GaAsP/InGaAs quantum well solar cells;Ekins-Daukes;Applied Physics Letters,1999

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