A numerical simulation tool for nanoscale ion-sensitive field-effect transistor-Reference-Cited by-同舟云学术

A numerical simulation tool for nanoscale ion-sensitive field-effect transistor

Published:2016-04-27 Issue:6 Volume:29 Page:1118-1128
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Abdolkader Tarek M.¹²

Affiliation:

1. Department of Basic Engineering Sciences; Faculty of Engineering; Benha University; Egypt

2. Umm AlQura University; Makkah Saudi Arabia

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Reference18 articles.

1. Development of an Ion-sensitive solid-state device for neurophysiological measurements;Bergveld;IEEE Trans Biomed Eng,1970

2. Abdolkader TM ISFET pH-sensor sensitivity extraction using conventional MOSFET simulation tools 2015 International Conference on Environment and Bio-Engineering 2015

3. TCAD-based simulation method for the electrolyte-insulator-semiconductor field-effect transistor;Choi;IEEE Trans Electron Devices,2015

4. Yusof KA et al pH sensing characteristics of silicon nitride thin film and silicon nitride-based ISFET sensor Control and System Graduate Research Colloquium ICSGRC 2013 IEEE 4th 2013

5. Theory of signal and noise in double-gated nanoscale electronic pH sensors;Go;J Appl Phys,2012

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