Affiliation:
1. School of Materials Shenzhen Campus of Sun Yat‐sen University Shenzhen Guangdong China
2. LONGi Green Energy Technology Co., Ltd. Xi'an China
3. LONGi Central R&D Institute Xi'an China
Abstract
AbstractWith the improvement of surface passivation, bulk recombination is becoming an indispensable and decisive factor to assess the theoretical limiting efficiency (
) of crystalline silicon (c‐Si) solar cells. In simultaneous consideration of surface and bulk recombination, a modified model of
evaluation is developed. Surface recombination is directly depicted with contact selectivity while bulk recombination is revised on the aspects of ideality factor and wafer thickness. The
of the double‐side silicon heterojunction (SHJ) and double‐side tunneling‐oxide passivating contact (TOPCon) solar cells are numerically simulated using the new model as 28.99% and 29.19%, respectively. However, the
of single‐side TOPCon solar cells, the more practicable scenario, is only 27.79%. Besides, the
of the double‐side SHJ solar cells would exceed the double‐side TOPCon solar cells if the recombination parameter of the non‐contacted area is higher than 0.6 fA/cm2, instead of perfect passivation. Our results are instructive in accurately assessing efficiency potential and accordingly optimizing design strategies of c‐Si solar cells.
Funder
National Key Research and Development Program of China
Shenzhen Fundamental Research Program
National Natural Science Foundation of China
Basic and Applied Basic Research Foundation of Guangdong Province
Cited by
2 articles.
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