Affiliation:
1. Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang 110016 China
2. School of Materials Science and Engineering University of Science and Technology of China Shenyang 110016 China
3. Low temperature Physics Laboratory College of Physics and Center of Quantum Materials and Devices Chongqing University Chongqing 401331 China
Abstract
AbstractThe magnetic properties, magneto‐resistivity, Hall resistivity, Seebeck coefficient, and heat capacity are investigated for a magnetic topological nodal‐line semimetal TbSbTe. The calculated energy‐band structures of TbSbTe show two nodal rings on the kx‐ky planes, and the Fermi surface possesses one electron pocket with an enclosure of one hole pocket around the Γ point. The multiple magnetic phase transitions are induced at critical magnetic fields of Hc1 ≈ 10.5 kOe, Hc2 ≈ 20.8 kOe, and Hc3 ≈ 38.2 kOe at 2 K for the H // ab plane. Temperature dependence of electrical resistivity displays a hump‐like feature around 240 K, a general positive slope above TN = 6 K but a negative slope below TN. The magnetoresistance exhibits a conversion from the semi‐classical H2 dependence at weak fields to the linear‐field dependence at high fields, indicating the presence of a Dirac linear energy dispersion. TbSbTe may provide an ideal platform for studying topological physics and designing devices based on topological quantum materials.
Funder
National Natural Science Foundation of China
Subject
Electrical and Electronic Engineering,Computational Theory and Mathematics,Condensed Matter Physics,Mathematical Physics,Nuclear and High Energy Physics,Electronic, Optical and Magnetic Materials,Statistical and Nonlinear Physics
Cited by
5 articles.
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