Theory on Electron–Phonon Spin Dephasing in GaAs Multi‐Electron Double Quantum Dots
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Published:2023-01-11
Issue:3
Volume:6
Page:
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ISSN:2511-9044
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Container-title:Advanced Quantum Technologies
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language:en
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Short-container-title:Adv Quantum Tech
Author:
He Guanjie12,
Chan Guo Xuan12,
Wang Xin12ORCID
Affiliation:
1. Department of Physics City University of Hong Kong Hong Kong SAR China
2. City University of Hong Kong Shenzhen Research Institute Shenzhen Guangdong 518057 China
Abstract
AbstractRecent studies reveal that a double‐quantum‐dot system hosting more than two electrons may be superior in certain aspects as compared to the traditional case in which only two electrons are confined (a singlet–triplet qubit). The electron–phonon dephasing occurring in a GaAs multi‐electron double‐quantum‐dot system is studied, in a biased case in which the singlet state is hybridized, as well as in an unbiased case in which the hybridization is absent. It is found that while the electron–phonon dephasing rate increases with the number of electrons confined in the unbiased case, this does not hold in the biased case. A merit figure is defined as a ratio between the exchange energy and the dephasing rate, and have shown that in experimentally relevant range of the exchange energy, the merit figure actually increases with the number of electrons in the biased case. The results show that the multi‐electron quantum‐dot system has another advantage in mitigating the effect of electron–phonon dephasing, which is previously under‐appreciated in the literature.
Funder
National Natural Science Foundation of China
Guangdong Province Introduction of Innovative R&D Team
Special Project for Research and Development in Key areas of Guangdong Province
Subject
Electrical and Electronic Engineering,Computational Theory and Mathematics,Condensed Matter Physics,Mathematical Physics,Nuclear and High Energy Physics,Electronic, Optical and Magnetic Materials,Statistical and Nonlinear Physics
Cited by
1 articles.
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