High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures-Reference-Cited by-同舟云学术

High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures

Published:2018-01-15 Issue:4 Volume:5 Page:1700830
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Adv. Sci.

Author:

Yan Xiao¹,Zhang David Wei¹,Liu Chunsen¹,Bao Wenzhong¹,Wang Shuiyuan¹,Ding Shijin¹,Zheng Gengfeng²,Zhou Peng¹^ORCID

Affiliation:

1. State Key Laboratory of ASIC and System; School of Microelectronics; Fudan University; Shanghai 200433 China

2. Laboratory of Advanced Materials; Department of Chemistry; Collaborative Innovation Center of Chemistry for Energy Materials; Fudan University; Shanghai 200433 China

Funder

National Natural Science Foundation of China

National Key Research and Development Program

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Reference45 articles.

1. p−nJunction Transistors

2. Silicon bipolar device structures for digital applications: technology trends and future directions

3. A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications

4. Van der Waals heterostructures and devices

5. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

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