Independent Band Modulation in 2D van der Waals Heterostructures via a Novel Device Architecture-Reference-Cited by-同舟云学术

Independent Band Modulation in 2D van der Waals Heterostructures via a Novel Device Architecture

Published:2018-08-02 Issue:9 Volume:5 Page:1800237
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Adv. Sci.

Author:

Guo Zhongxun¹,Chen Yan²,Zhang Heng¹,Wang Jianlu²,Hu Weida²,Ding Shijin¹,Zhang David Wei¹,Zhou Peng¹^ORCID,Bao Wenzhong¹

Affiliation:

1. State Key Laboratory of ASIC and System; School of Microelectronics; Fudan University; Shanghai 200433 China

2. State Key Laboratory of Infrared Physics; Shanghai Institute of Technical Physics; Chinese Academy of science; 500 Yutian Road Shanghai 200083 China

Funder

National Key Research and Development Program

Natural Science Foundation of Shanghai

National Natural Science Foundation of China

1000 Talented Youth Plan

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/advs.201800237/fullpdf

Reference46 articles.

1. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

2. Electronics based on two-dimensional materials

3. Van der Waals heterostructures

4. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

5. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

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