Simulation Evidence of Hexagonal‐to‐Tetragonal ZnSe Structure Transition: A Monolayer Material with a Wide‐Range Tunable Direct Bandgap-Reference-Cited by-同舟云学术

Simulation Evidence of Hexagonal‐to‐Tetragonal ZnSe Structure Transition: A Monolayer Material with a Wide‐Range Tunable Direct Bandgap

Published:2015-10-28 Issue:12 Volume:2 Page:1500290
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Adv. Sci.

Author:

Li Lei¹,Li Pengfei²,Lu Ning¹,Dai Jun¹,Zeng Xiao Cheng¹²

Affiliation:

1. Department of Chemistry University of Nebraska‐Lincoln Lincoln NE 68588 USA

2. Hefei National Laboratory for Physical Sciences at Microscale and Collaborative Innovation Center of Chemistry for Energy Materials University of Science and Technology of China Hefei Anhui 230026 P.R. China

Funder

National Science Foundation

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.201500290

Reference65 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap

4. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics

5. Single-layer MoS2 transistors

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