Ultrahigh, Ultrafast, and Self-Powered Visible-Near-Infrared Optical Position-Sensitive Detector Based on a CVD-Prepared Vertically Standing Few-Layer MoS2 /Si Heterojunction-Reference-Cited by-同舟云学术

Ultrahigh, Ultrafast, and Self-Powered Visible-Near-Infrared Optical Position-Sensitive Detector Based on a CVD-Prepared Vertically Standing Few-Layer MoS2 /Si Heterojunction

Published:2017-12-01 Issue:2 Volume:5 Page:1700502
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Adv. Sci.

Author:

Cong Ridong¹,Qiao Shuang¹,Liu Jihong¹,Mi Jiansong¹,Yu Wei¹,Liang Baolai¹,Fu Guangsheng¹,Pan Caofeng²³^ORCID,Wang Shufang¹

Affiliation:

1. Hebei Key Laboratory of Optic-Electronic Information and Materials; College of Physics Science and Technology; Hebei University; Baoding 071002 P. R. China

2. Beijing Institute of Nanoenergy and Nanosystems; Chinese Academy of Sciences; Beijing 100083 China

3. CAS Center for Excellence in Nanoscience; National Center for Nanoscience and Technology (NCNST); Beijing 100190 P. R. China

Funder

National Natural Science Foundation of China

Nature Science Foundation of Hebei Province

Science and technology research project of higher education institution of Hebei Province

Nature Science Foundation for Distinguished Young Scholars of Hebei University

Second Batch of Young Talents of Hebei Province

Minister of Science and Technology, China

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Reference64 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

3. Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials

4. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

5. Atomically ThinMoS2: A New Direct-Gap Semiconductor

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