Direct Vapor Growth of 2D Vertical Heterostructures with Tunable Band Alignments and Interfacial Charge Transfer Behaviors-Reference-Cited by-同舟云学术

Direct Vapor Growth of 2D Vertical Heterostructures with Tunable Band Alignments and Interfacial Charge Transfer Behaviors

Published:2019-02-14 Issue:7 Volume:6 Page:1802204
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Adv. Sci.

Author:

Zheng Weihao¹^ORCID,Zheng Biyuan¹,Yan Changlin¹²,Liu Ying¹,Sun Xingxia¹,Qi Zhaoyang¹,Yang Tiefeng¹,Jiang Ying³,Huang Wei¹,Fan Peng¹,Jiang Feng¹,Ji Wei²,Wang Xiao³,Pan Anlian¹³^ORCID

Affiliation:

1. Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan University Changsha Hunan 410012 China

2. Beijing Key Laboratory of Optoelectronic Functional Material & Micro–Nano DevicesDepartment of PhysicsRenmin University of China Beijing 100872 China

3. School of Physics and ElectronicsHunan University Changsha Hunan 410012 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.201802204

Reference50 articles.

1. Vertical and in-plane heterostructures from WS2/MoS2 monolayers

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3. Two-dimensional non-volatile programmable p–n junctions

4. One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy

5. Light-emitting diodes by band-structure engineering in van der Waals heterostructures

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