Engineering Processes at the Interface of p-Semiconductor for Enhancing the Open Circuit Voltage in p-Type Dye-Sensitized Solar Cells-Reference-Cited by-同舟云学术

Engineering Processes at the Interface of p-Semiconductor for Enhancing the Open Circuit Voltage in p-Type Dye-Sensitized Solar Cells

Published:2017-01-30 Issue:12 Volume:7 Page:1601776
ISSN:1614-6832
Container-title:Advanced Energy Materials
language:en
Short-container-title:Adv. Energy Mater.

Author:

Favereau Ludovic¹,Pellegrin Yann¹,Hirsch Lionel²³,Renaud Adèle⁴,Planchat Aurélien¹,Blart Errol¹,Louarn Guy⁴,Cario Laurent⁴,Jobic Stéphane⁴,Boujtita Mohammed¹,Odobel Fabrice¹

Affiliation:

1. Université LUNAM; Université de Nantes; CNRS, Chimie et Interdisciplinarité: Synthèse, Analyse Modélisation (CEISAM); UMR 6230, 2 rue de la Houssinière, BP 92208 44322 Nantes cedex 3 France

2. Université de Bordeaux; IMS; UMR 5218, 351 Cours de la libération F-33400 Talence France

3. CNRS, IMS; UMR 5218 F-33400 Talence France

4. Institut des Matériaux Jean Rouxel; Université de Nantes, CNRS; 2 rue de la Houssinière, BP 32229 44322 Nantes cedex 03 France

Funder

Agence Nationale de la Recherche

Région des Pays de la Loire

European Cooperation in Science and Technology

Publisher

Wiley

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment

Reference69 articles.