Low-Temperature Combustion-Synthesized Nickel Oxide Thin Films as Hole-Transport Interlayers for Solution-Processed Optoelectronic Devices-Reference-Cited by-同舟云学术

Low-Temperature Combustion-Synthesized Nickel Oxide Thin Films as Hole-Transport Interlayers for Solution-Processed Optoelectronic Devices

Published:2013-11-19 Issue:6 Volume:4 Page:1301460
ISSN:1614-6832
Container-title:Advanced Energy Materials
language:en
Short-container-title:Adv. Energy Mater.

Author:

Bai Sai¹,Cao Motao¹,Jin Yizheng¹²³,Dai Xinliang¹,Liang Xiaoyong¹,Ye Zhizhen¹²,Li Min¹,Cheng Jipeng¹,Xiao Xuezhang¹,Wu Zhongwei⁴,Xia Zhouhui⁴,Sun Baoquan⁴,Wang Ergang⁵,Mo Yueqi⁶,Gao Feng⁷,Zhang Fengling⁷

Affiliation:

1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering; Zhejiang University; Hangzhou 310027 P. R. China

2. Cyrus Tang Center for Sensor Materials and Applications; Zhejiang University; Hangzhou 310027 P. R. China

3. Center for Chemistry of High-Performance and Novel Materials; Zhejiang University; Hangzhou 310027 P. R. China

4. Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM); Soochow University; 199 Ren'ai Road Suzhou 215123 P. R. China

5. Department of Chemical and Biological, Engineering/Polymer Technology; Chalmers University of Technology; SE-412 96 Göteborg Sweden

6. Key Laboratory of Special Functional Materials; South China University of Technology; Guangzhou 510640 China

7. Biomolecular and Organic Electronics, IFM and Center of Organic Electronics; Linköping University; SE-581 83 Linköping Sweden

Publisher

Wiley

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment

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