Achieving zT > 2 in p‐Type AgSbTe 2− x Se x Alloys via Exploring the Extra Light Valence Band and Introducing Dense Stacking Faults-Reference-Cited by-同舟云学术

Achieving zT > 2 in p‐Type AgSbTe 2− x Se x Alloys via Exploring the Extra Light Valence Band and Introducing Dense Stacking Faults

Published:2017-12-18 Issue:9 Volume:8 Page:1702333
ISSN:1614-6832
Container-title:Advanced Energy Materials
language:en
Short-container-title:Adv. Energy Mater.

Author:

Hong Min¹,Chen Zhi‐Gang¹²^ORCID,Yang Lei¹,Liao Zhi‐Ming¹,Zou Yi‐Chao¹,Chen Yan‐Hui³,Matsumura Syo⁴,Zou Jin¹⁵

Affiliation:

1. Materials Engineering The University of Queensland Brisbane Queensland 4072 Australia

2. Centre of Future Materials The University of Southern Queensland Springfield Queensland 4300 Australia

3. Beijing Key Lab of Microstructure and Property of Advanced Materials Institute of Microstructure and Properties of Advanced Materials Beijing University of Technology Beijing 100124 China

4. Department of Applied Quantum Physics and Nuclear Engineering Kyushu University Motooka 744 Nishi‐ku Fukuoka 819‐0395 Japan

5. Centre for Microscopy and Microanalysis The University of Queensland Brisbane Queensland 4072 Australia

Funder

Australian Research Council

Publisher

Wiley

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aenm.201702333

Reference68 articles.

1. Complex thermoelectric materials

2. Compromise and Synergy in High‐Efficiency Thermoelectric Materials

3. Band Engineering of Thermoelectric Materials

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