Temperature Dependent n‐Type Self Doping in Nominally 19‐Electron Half‐Heusler Thermoelectric Materials
Author:
Affiliation:
1. Department of Materials Science and Engineering Northwestern University Evanston IL 60208 USA
2. State Key Laboratory of Silicon Materials and School of Materials Science and Engineering Zhejiang University Hangzhou 310027 China
Funder
U.S. Department of Energy
National Science Foundation
Publisher
Wiley
Subject
General Materials Science,Renewable Energy, Sustainability and the Environment
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/aenm.201801409
Reference39 articles.
1. Simple rules for the understanding of Heusler compounds
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