Affiliation:
1. Research Scholar, Department of Electronics and Communication Engineering YSR Engineering College of Yogivemana University YSR District Andhra Pradesh 516360 India
2. Professor, Department of Electronics and Communication Engineering YSR Engineering College of Yogivemana University YSR District Andhra Pradesh 516360 India
Abstract
SummaryWithin the domain of contemporary wireless communication systems, crafting Low‐Noise Amplifiers (LNA) holds a pivotal significance in achieving heightened signal sensitivity and comprehensive system efficacy and suppresses noise contributions from subsequent stages. Additionally, the low noise figure (NF) and high gain are critical LNA performance parameters in portable applications. Normally, LNA contains issues in noise performance, amplification, bandwidth, gain, and stability. To overcome these challenges, there must be a proper selection of transistors, harmonious impedance calibration, bias optimization, and circuit fine‐tuning. Moreover, metal oxide semiconductor field effect transistors (MOSFETs) are a popular choice in LNA design because of their excellent noise performance, high input impedance, complementary metal‐oxide semiconductor (CMOS) integration capabilities, low power operation, and suitability for a wide range of frequency applications. Through simulation and iterative enhancement, the LNA showcases remarkable Noise Figure, amplification, and linearity over a designated frequency span. This creation contributes to the advancement of radio frequency (RF) circuitry by designing an approach for LNA crafting that harmonizes conflicting prerequisites and unveils effective noise mitigation tactics. The outcomes emphasize the importance of a deliberated circuit architecture and parameter adjustment in accomplishing superlative LNA capabilities, rendering it fit for assimilation into diverse communication systems that demand minimal noise and heightened sensitivity.