Investigations of SiC merged pin Schottky diodes under isothermal and non-isothermal conditions-Reference-Cited by-同舟云学术

Investigations of SiC merged pin Schottky diodes under isothermal and non-isothermal conditions

Published:2011-04-20 Issue:3 Volume:24 Page:207-217
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Zarębski J.,Dąbrowski J.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/jnm.771/fullpdf

Reference16 articles.

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4. http://www.infineon.com/...../2006/174579.html

5. Bjoerk F Hancock J Treu M Rupp M Reimann T 2 nd Generation 600 V SiC Schottky diodes use merged pn/Schottky structure for surge overload protection 170

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