Structural damage and ion-channelling effects in a single-crystal Si layer modified by medium-heavy ions-Reference-Cited by-同舟云学术

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Structural damage and ion-channelling effects in a single-crystal Si layer modified by medium-heavy ions

Published:2018-07-13 Issue:11 Volume:50 Page:1243-1249
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf Interface Anal

Author:

Mikšová R.¹^ORCID,Macková A.¹²^ORCID,Jagerová A.¹²,Yatskiv R.³^ORCID

Affiliation:

1. Nuclear Physics Institute of the CAS; Rez 250 68 Czech Republic

2. Department of Physics, Faculty of Science; J. E. Purkinje University; Ceske Mladeze 8 Usti nad Labem 400 96 Czech Republic

3. Czech Academy of Sciences; Institute of Photonics and Electronics; Prague 182 51 Czech Republic

Funder

Grantová Agentura České Republiky

OP RDE, MEYS, Czech Republic

Centre of Accelerators and Nuclear Analytical Methods

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sia.6492/fullpdf

Reference26 articles.

1. High-energy high-dose Ni irradiation of SOI structures;Lindner;Nucl Instrum Methods Phys Res B,1993

2. Study of structure and surface modification of silicon-on-insulator (SOI) devices synthesized by dual ion implantation;Polji;Surface and Coating Technology,2009

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