Figures-of-merit genetic extraction for InGaAs lasers, SiGe low-noise amplifiers, and ZnSe/Ge/GaAs HBTs

Author:

Tseng H. C.,Horng J. B.,Hu C.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Reference17 articles.

1. SoC emerging technologies;Eshraghian;Proceedings of the IEEE,2006

2. 107-mW low-noise green-light emission by frequency doubling of a reliable 1060-nm DFB semiconductor laser diode;Nguyen;IEEE Photonics Technology Letters,2006

3. High-brightness tapered lasers with an Al-free active region at 1060 nm;Ruiz;Proceedings of the SPIE,2009

4. Tseng HC Wu AH Wan CT Su YK Hu C Tsau S Characterization on the 1060 nm InGaAs/GaAs quantum-well laser diodes with thermal vias

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