Studying the Environments of Ion-Implanted Arsenic Defects in Amorphous and Recrystallised Silicon with Impurity EXAFS-Reference-Cited by-同舟云学术

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Studying the Environments of Ion-Implanted Arsenic Defects in Amorphous and Recrystallised Silicon with Impurity EXAFS

Published:1997-09 Issue:9 Volume:101 Page:1258-1264
ISSN:0005-9021
Container-title:Berichte der Bunsengesellschaft für physikalische Chemie
language:en
Short-container-title:Berichte der Bunsengesellschaft für physikalische Chemie

Author:

Greaves G.N.,Dent A.J.,Derst G.,Kalbitzer S.,Müller G.

Publisher

Wiley

Subject

General Chemical Engineering

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/bbpc.199700036/fullpdf

Reference22 articles.

1. Electrons in disordered structures

2. Substitutional doping of amorphous silicon

3. Electronic properties of substitutionally doped amorphous Si and Ge

4. Electrical and photoconductive properties of ion implanted amorphous silicon

5. Doping and the Fermi Energy in Amorphous Silicon

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Amorphisation processes in silicon;Current Opinion in Solid State and Materials Science;1998-08

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