Wet etching for improved GaN‐based HBT performance-Reference-Cited by-同舟云学术

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Wet etching for improved GaN‐based HBT performance

Published:2005-04-11 Issue:7 Volume:2 Page:2680-2683
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Bardwell Jennifer A.,Haffouz Soufien¹,Hsu Eugene M.¹,Tang Haipeng¹,Chyurlia Peter²,Webb James B.³

Affiliation:

1. Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, ON, K1A 0R6, Canada

2. Department of Electronics, Carleton University, Ottawa, ON, Canada

3. Steacie Institute for Molecular Sciences, National Research Council, Ottawa, ON, K1A 0R6, Canada

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200461358

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes;Nanomaterials;2019-03-05

2. Wet-Chemical Etching of GaN: Underlying Mechanism of a Key Step in Blue and White LED Production;ChemistrySelect;2018-02-06

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