X‐ray diffraction, photoluminescence and composition standards of compound semiconductors
Author:
Affiliation:
1. National Institute of Standards and Technology, 325 Broadway, Boulder, CO 80305, USA
2. National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200306245
Reference11 articles.
1. Setting limits on the accuracy of X-ray determination of Al concentration in epitaxial layers
2. Origin of Electron Diffraction Oscillations during Crystal Growth
3. Limits of Analytical Accuracy for Two Critical Semiconductors Systems: (Al, Ga)(As, P) and (In, Ga)(As, P)
4. J.Armstrong R.Marinenko B.Bertness andL.Robins Analyt. Chem. (in preparation).
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1. Growth of GaAs/AlGaAs structure for photoelectric cathode;J KOR CRYST GROWTH C;2017
2. Real-time algorithm to determine the period and phase of Reflection High-Energy Electron Diffraction (RHEED) intensity oscillations during epitaxial growth;Journal of Crystal Growth;2017-11
3. Monitoring surface roughness during film growth using modulated RHEED intensity oscillations;Journal of Crystal Growth;2017-11
4. Precise calibration of thickness and composition of epitaxial AlGaAs heterostructures with vertical-cavity optical microresonators;Technical Physics Letters;2014-12
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