Fabrication of c-axis oriented Ga-doped MgZnO-based UV transparent electrodes by molecular precursor method-Reference-Cited by-同舟云学术

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Fabrication of c-axis oriented Ga-doped MgZnO-based UV transparent electrodes by molecular precursor method

Published:2010-06-22 Issue:10 Volume:7 Page:2471-2473
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi (c)

Author:

Honda Tohru,Oda Takuto,Mashiyama Yoshihiro,Hara Hiroki,Sato Mitsunobu

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering;physica status solidi (a);2020-01-29

2. The Science of Molecular Precursor Method;Advanced Coating Materials;2018-12-12

3. Molecular Precursor Method for Fabricating p-Type Cu2O and Metallic Cu Thin Films;Modern Technologies for Creating the Thin-film Systems and Coatings;2017-03-08

4. Advanced Application of Transparent Electrodes—Photovoltaic Lithium-ion Battery;The Journal of the Institute of Electrical Engineers of Japan;2017

5. Cathodoluminescence spectra of Ga–In–O polycrystalline films fabricated by molecular precursor method;Japanese Journal of Applied Physics;2014-01-01

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