Superlattice stacking structure in InGaN thin film pseudomorphic to GaN (0001) substrate: semigrand canonical Monte Carlo simulation-Reference-Cited by-同舟云学术

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Superlattice stacking structure in InGaN thin film pseudomorphic to GaN (0001) substrate: semigrand canonical Monte Carlo simulation

Published:2003-11-24 Issue:7 Volume: Page:2486-2489
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Mori Atsushi¹,Ito Tomonori²,Kangawa Yoshihiro³,Koukitu Akinori³

Affiliation:

1. Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima, Tokushima 770‐8506, Japan

2. Department of Physics Engineering, Faculty of Engineering, Mie University, Mie 514‐8507, Japan

3. Department of Applied Chemistry, Faculty of Engineering, Tokyo University of Agriculture and Technology, Tokyo 184‐8588, Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303347

Reference21 articles.

1. Preparation and optical properties of Ga1−xInxN thin films

2. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

3. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition

4. Phase separation in InGaN/GaN multiple quantum wells

5. Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganic Chemical Vapor Deposition

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