Melting point of wurtzite‐type GaN crystal-Reference-Cited by-同舟云学术

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Melting point of wurtzite‐type GaN crystal

Published:2003-11-24 Issue:7 Volume: Page:2420-2423
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Harafuji K.¹,Tsuchiya T.²,Kawamura K.²

Affiliation:

1. Advanced Technology Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3‐1‐1 Yagumo‐Nakamachi, Moriguchi, Osaka 570‐8501, Japan

2. Department of Earth and Planetary Science, Tokyo Institute of Technology, 2‐12‐1 Ookayama, Meguro, Tokyo, 152‐8551, Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303476

Reference8 articles.

1. High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates

2. Present Status of InGaN-Based Laser Diodes

3. Novel Techniques for Stabilizing Transverse Mode in AlGaInN-Based Laser Diodes

4. Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN

5. Quantum Dielectric Theory of Electronegativity in Covalent Systems. III. Pressure-Temperature Phase Diagrams, Heats of Mixing, and Distribution Coefficients

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physisorption Structure of Water on the GaN Polar Surface: Force Field Development and Molecular Dynamics Simulations;The Journal of Physical Chemistry C;2011-05-23

2. Molecular dynamics simulation for evaluating melting point of wurtzite-type GaN crystal;Journal of Applied Physics;2004-09

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