Study of SiNx:Hy passivant layers for AlGaN/GaN high electron mobility transistors
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference18 articles.
1. Current instabilities in GaN-based devices
2. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
3. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
4. Undoped AlGaN/GaN HEMTs for microwave power amplification
5. Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc2O3
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nitrogen rich PECVD silicon nitride for passivation of Si and AlGaN/GaN HEMT devices;Solid-State Electronics;2021-12
2. High-resolution hydrogen profiling in AlGaN/GaN heterostructures grown by different epitaxial methods;Journal of Physics D: Applied Physics;2009-02-18
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