Growth, Stimulated Emission, Photo‐ and Electroluminescence of InGaN/GaN EL‐Test Heterostructures-Reference-Cited by-同舟云学术

Growth, Stimulated Emission, Photo‐ and Electroluminescence of InGaN/GaN EL‐Test Heterostructures

Published:2002-12-19 Issue:1 Volume: Page:272-275
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Lutsenko E.V.¹,Pavlovskii V.N.¹,Zubialevich V.Z.¹,Stognij A.I.¹,Gurskii A.L.¹,Hryshanau V.A.²,Shulenkov A.S.²,Yablonskii G.P.¹,Schön O.³,Protzmann H.³,Lünenbürger M.³,Schineller B.³,Dikme Y.⁴,Jansen R.H.⁴,Heuken M.³

Affiliation:

1. Stepanov Institute of Physics, National Academy of Sciences, F. Skaryna Ave. 68, 220072 Minsk, Belarus

2. Minsk Research Institute of Radiomaterials, Minsk, Belarus

3. AIXTRON AG, Kackertstr. 15–17, 52072 Aachen, Germany

4. Institut für Theoretische Elektrotechnik, RWTH Aachen, Germany

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200390041

Reference3 articles.

1. Performance of High-Power AlInGaN Light Emitting Diodes

2. Improved Characteristics of Blue and Green InGaN-Based Light-Emitting Diodes on Si Grown by Metalorganic Chemical Vapor Deposition

3. Luminescence and Stimulated Emission from GaN on Silicon Substrates Heterostructures

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