Disorder-induced features of the transverse resistance in a Si-MOSFET in the quantum Hall effect regime
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference9 articles.
1. New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
2. Metal–insulator transition in two-dimensional electron systems
3. Longitudinal conductivity in Si/SiGe heterostructure at integer filling factors
4. MAGNETOTRANSPORT IN DILUTE 2D SI-MOSFET SYSTEM
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The dip effect under integer quantized Hall conditions;The European Physical Journal B;2014-03
2. Anomalous resistance overshoot in the integer quantum Hall effect;Scientific Reports;2013-11-05
3. Evanescent incompressible strips as origin of the observed Hall resistance overshoot;EPL (Europhysics Letters);2010-12-01
4. Quantum Hall resistance overshoot in two-dimensional (2D) electron gases: theory and experiment;New Journal of Physics;2010-11-16
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