Photoluminescence of single InGaN quantum dots grown at low surface densities by MOVPE-Reference-Cited by-同舟云学术

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Photoluminescence of single InGaN quantum dots grown at low surface densities by MOVPE

Published:2003-11-24 Issue:7 Volume: Page:2721-2724
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Halsall M. P.,Harmer P.¹,Parbrook P. J.²,Wang T.²,Wells J.‐P. R.³

Affiliation:

1. Department of Physics UMIST, P.O. Box 88, Manchester, M60 1QD, UK

2. EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, Mappin Street, Sheffield, S1 3JD, UK

3. Department of Physics and Astronomy, University of Sheffield, S3 7RH, UK

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303525

Reference5 articles.

1. Origin of Luminescence from InGaN Diodes

2. Indium segregation in InGaN quantum-well structures

3. Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition

4. Narrow photoluminescence peaks from localized states in InGaN quantum dot structures

5. Homogeneous Linewidths in the Optical Spectrum of a Single Gallium Arsenide Quantum Dot

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Two-photon excited luminescence spectral distribution observation in wide-gap semiconductor crystals;Applied Physics Letters;2008-04-21

2. Effects of depletion on the emission from individual InGaN dots;Applied Physics Letters;2006-03-20

3. Microphotoluminescence and photocurrent studies of InGaN quantum dots grown by MOVPE at low surface densities on GaN;Microelectronics Journal;2005-03

4. Self-consistent calculations of exciton, biexciton and charged exciton energies in InGaN/GaN quantum dots;Superlattices and Microstructures;2004-10

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