Optical characterization of ultra‐pure GaAs-Reference-Cited by-同舟云学术

Optical characterization of ultra‐pure GaAs

Published:2003-02 Issue:3 Volume: Page:1024-1027
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Zhilyaev Yu. V.,Poletaev N. K.¹,Botnaryuk V. M.¹,Orlova T. A.¹,Fedorov L. M.¹,Yusupova Sh. A.¹,Owens A.²,Bavdaz M.²,Peacock A.²,O'Meara B.²,Helava H.³

Affiliation:

1. A. F. Ioffe Physico‐Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia

2. European Space Agency, Astrophysics Division, P.O. Box 299, 2200 A G Noordwijk, The Netherlands

3. Fox Group, 331 Magnolia Ave, Piedmont, CA 94610, USA

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200306239

Reference8 articles.

1. Yu. V.Zhilyaev V. V.Rossin T. V.Rossina andV. V.Travnikov Proc. SPIE Int. Conf. Phys. Concepts of Mater. for Novel Optoel. Device Appl. Aachen 1990 (Bellingham WA USA 1991) pp. 848–859.

2. Orientation dependent amphoteric behavior of group IV impurities in the molecular beam epitaxial and vapor phase epitaxial growth of GaAs

3. Determination of donor and acceptor densities in high‐purity GaAs from photoluminescence analysis

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