Photoluminescence, cathodo-luminescence and micro-Raman spectroscopy of as-grown stacking faults in 4H-SiC-Reference-Cited by-同舟云学术

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Photoluminescence, cathodo-luminescence and micro-Raman spectroscopy of as-grown stacking faults in 4H-SiC

Published:2007-04 Issue:4 Volume:4 Page:1513-1516
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Juillaguet S.,Albrecht M.,Lewandowska R.,Camassel J.,Chassagne T.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference13 articles.

1. Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties

2. Heterojunctions and superlattices based on silicon carbide

3. Specific Aspects of Type II Heteropolytype Stacking Faults in SiC

4. Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"

5. Optical Properties of Cubic SiC: Luminescence of Nitrogen-Exciton Complexes, and Interband Absorption

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1. Stacking faults in 4H–SiC epilayers and IGBTs;Materials Science in Semiconductor Processing;2024-07

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