Thermally dependent gain of 1.3 µm dilute nitride double quantum well lasers-Reference-Cited by-同舟云学术

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Thermally dependent gain of 1.3 µm dilute nitride double quantum well lasers

Published:2008-02 Issue:2 Volume:5 Page:490-494
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

MacKenzie R.,Bull S.,Lim J. J.,Chao S.,Sujecki S.,Sadeghi M.,Wang S. M.,Larsson A.,Melanen P.,Sipilä P.,Uusimaa P.,Larkins E. C.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference13 articles.

1. 10 Gbit/s modulation of 1.3 [micro sign]m GaInNAs lasers up to 110°C

2. The impact of nonequilibrium gain in a spectral laser diode model

3. High-frequency modulation and bandwidth limitations of GaInNAs double-quantum-well lasers

4. Technique for measurement of the gain spectra of semiconductor diode lasers

5. Gain spectra in GaAs double−heterostructure injection lasers

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3-$\mu{\hbox {m}}$ Double Quantum-Well GaInNAs–GaAs Lasers;IEEE Journal of Quantum Electronics;2008-07

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