Investigation of lattice plane bending in large (0001)SiC crystals using high‐energy X‐ray technique-Reference-Cited by-同舟云学术

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Investigation of lattice plane bending in large (0001)SiC crystals using high‐energy X‐ray technique

Published:2005-03 Issue:4 Volume:2 Page:1288-1291
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Epelbaum B. M.¹,Herro Z. G.¹²,Bickermann M.¹,Seitz C.³,Magerl A.³,Masri P.²,Winnacker A.¹

Affiliation:

1. Department of Materials Science 6, University of Erlangen‐Nürnberg, Martensstr. 7, 91058 Erlangen, Germany

2. Groupe d'Etude des Semi‐conducteurs, Université Montpellier 2, CNRS‐UMR5650, 12 Place E. Bataillon, 34095 Montpellier, France

3. Department of Crystallography and Structural Physics, University of Erlangen‐Nürnberg, Bismarkstr. 10, 91054 Erlangen, Germany

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200460428

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the lattice parameters of silicon carbide;Journal of Applied Physics;2009-02

2. Characterization of SiC Substrates Using X-Ray Rocking Curve Mapping;Materials Science Forum;2006-10

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