Fabrication and characterization of GaN‐based distributed Bragg reflector mirrors for low lasing threshold and integrated photonics-Reference-Cited by-同舟云学术

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Fabrication and characterization of GaN‐based distributed Bragg reflector mirrors for low lasing threshold and integrated photonics

Published:2005-04-11 Issue:7 Volume:2 Page:2895-2898
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Kotani Teruhisa¹,Hatada Yoshitaka¹,Funato Mitsuru¹,Narukawa Yukio²,Mukai Takashi²,Kawakami Yoichi¹,Fujita Shigeo¹

Affiliation:

1. Department of Electronic Science and Engineering, Kyoto University, Kyoto, 615‐8510, Japan

2. Nitride Semiconductor Research Laboratory, Nichia Corporation, 491 Oka Kaminaka Anan, Tokushima, 774‐8601, Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200461543

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancing the Light-Extraction Efficiency of an AlGaN Nanowire Ultraviolet Light-Emitting Diode by Using Nitride/Air Distributed Bragg Reflector Nanogratings;IEEE Photonics Journal;2017-10

2. Design of Fabry-Perot filters in planar waveguides with deep-etched features for spatial switching;Optics Express;2009-09-17

3. Surface charge lithography for GaN micro- and nanostructuring;SPIE Proceedings;2009-02-12

4. Influence of patterned TiO 2 /SiO 2 dielectric multilayers for back and front mirror facets on GaN-based laser diodes;Chinese Physics B;2008-09

5. Study and formation of 2D microstructures of sapphire by focused ion beam milling;Microelectronic Engineering;2008-03

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